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G3S12010BM

G3S12010BM

G3S12010BM

Global Power Technology-GPT

SIC SCHOTTKY DIODE 1200V 10A 3-P

G3S12010BM Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

G3S12010BM Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $15.80000 $15.8
500 $15.642 $7821
1000 $15.484 $15484
1500 $15.326 $22989
2000 $15.168 $30336
2500 $15.01 $37525
Inventory changes frequently.

G3S12010BM Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

G3S12010BM Global Power Technology-GPT

Имя Ценить
статус продукта Active
конфигурация диода 1 Pair Common Cathode
тип диода Silicon Carbide Schottky
напряжение - постоянное обратное (vr) (макс.) 1200 V
ток - средний выпрямленный (io) (на диод) 19.8A (DC)
напряжение - прямое (vf) (макс.) @ if 1.7 V @ 5 A
скорость No Recovery Time > 500mA (Io)
время обратного восстановления (trr) 0 ns
ток - обратная утечка @ vr 50 µA @ 1200 V
рабочая температура - переход -55°C ~ 175°C
тип крепления Through Hole
упаковка / кейс TO-247-3
пакет устройства поставщика TO-247AB
Q1: What is the purchase guide for G3S12010BM?
G3S12010BM of Global Power Technology-GPT is a SIC SCHOTTKY DIODE 1200V 10A 3-P. ICHOME is a long-term spot supplier of G3S12010BM, supporting sample purchase and bulk order.
Q2: How to find the detailed information of G3S12010BM?
Download G3S12010BM Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingG3S12010BM from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide G3S12010BM alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you G3S12010BM replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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