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DMN10H099SK3-13

DMN10H099SK3-13

DMN10H099SK3-13

Diodes Incorporated

MOSFET N-CH 100V 17A TO252

DMN10H099SK3-13 Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

DMN10H099SK3-13 Цены и заказ

Количество Цена за единицу товара Цена внешн.
2,500 $0.28002 -
5,000 $0.26286 -
12,500 $0.25428 -
25,000 $0.24960 -
Inventory changes frequently.

DMN10H099SK3-13 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

DMN10H099SK3-13 Diodes Incorporated

Имя Ценить
статус продукта Active
тип fet N-Channel
технология MOSFET (Metal Oxide)
Напряжение сток-исток (vdss) 100 V
ток - непрерывный сток (id) при 25°c 17A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 6V, 10V
rds на (макс) @ id, vgs 80mOhm @ 3.3A, 10V
vgs(th) (макс) @ id 3V @ 250µA
заряд затвора (qg) (макс.) @ vgs 25.2 nC @ 10 V
вгс (макс) ±20V
входная емкость (ciss) (макс.) @ vds 1172 pF @ 50 V
особенность fet -
рассеиваемая мощность (макс.) 34W (Tc)
рабочая температура -55°C ~ 150°C (TJ)
тип крепления Surface Mount
пакет устройства поставщика TO-252-3
упаковка / кейс TO-252-3, DPak (2 Leads + Tab), SC-63
Q1: What is the purchase guide for DMN10H099SK3-13?
DMN10H099SK3-13 of Diodes Incorporated is a MOSFET N-CH 100V 17A TO252. ICHOME is a long-term spot supplier of DMN10H099SK3-13, supporting sample purchase and bulk order.
Q2: How to find the detailed information of DMN10H099SK3-13?
Download DMN10H099SK3-13 Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingDMN10H099SK3-13 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide DMN10H099SK3-13 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you DMN10H099SK3-13 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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