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G3R40MT12D

G3R40MT12D

G3R40MT12D

GeneSiC Semiconductor

SIC MOSFET N-CH 71A TO247-3

G3R40MT12D Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

G3R40MT12D Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $18.46000 $18.46
500 $18.2754 $9137.7
1000 $18.0908 $18090.8
1500 $17.9062 $26859.3
2000 $17.7216 $35443.2
2500 $17.537 $43842.5
13 items

G3R40MT12D Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

G3R40MT12D GeneSiC Semiconductor

Имя Ценить
статус продукта Active
тип fet N-Channel
технология SiCFET (Silicon Carbide)
Напряжение сток-исток (vdss) 1200 V
ток - непрерывный сток (id) при 25°c 71A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 15V
rds на (макс) @ id, vgs 48mOhm @ 35A, 15V
vgs(th) (макс) @ id 2.69V @ 10mA
заряд затвора (qg) (макс.) @ vgs 106 nC @ 15 V
вгс (макс) ±15V
входная емкость (ciss) (макс.) @ vds 2929 pF @ 800 V
особенность fet -
рассеиваемая мощность (макс.) 333W (Tc)
рабочая температура -55°C ~ 175°C (TJ)
тип крепления Through Hole
пакет устройства поставщика TO-247-3
упаковка / кейс TO-247-3
Q1: What is the purchase guide for G3R40MT12D?
G3R40MT12D of GeneSiC Semiconductor is a SIC MOSFET N-CH 71A TO247-3. ICHOME is a long-term spot supplier of G3R40MT12D, supporting sample purchase and bulk order.
Q2: How to find the detailed information of G3R40MT12D?
Download G3R40MT12D Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingG3R40MT12D from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide G3R40MT12D alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you G3R40MT12D replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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