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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 769W (Tc) |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-258 |
| Package / Case | TO-258-3, TO-258AA |
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