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G30N02T

G30N02T

G30N02T

Goford Semiconductor

N20V,RD(MAX)<[email protected],VTH0.5V~1.

G30N02T Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

G30N02T Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $0.62000 $0.62
500 $0.6138 $306.9
1000 $0.6076 $607.6
1500 $0.6014 $902.1
2000 $0.5952 $1190.4
2500 $0.589 $1472.5
Inventory changes frequently.

G30N02T Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

G30N02T Goford Semiconductor

Имя Ценить
статус продукта Active
тип fet N-Channel
технология MOSFET (Metal Oxide)
Напряжение сток-исток (vdss) 20 V
ток - непрерывный сток (id) при 25°c 30A (Ta)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 4.5V
rds на (макс) @ id, vgs 13mOhm @ 20A, 4.5V
vgs(th) (макс) @ id 1.2V @ 250µA
заряд затвора (qg) (макс.) @ vgs 15 nC @ 10 V
вгс (макс) ±12V
входная емкость (ciss) (макс.) @ vds 900 pF @ 10 V
особенность fet -
рассеиваемая мощность (макс.) 40W (Ta)
рабочая температура -55°C ~ 150°C (TJ)
тип крепления Through Hole
пакет устройства поставщика TO-220
упаковка / кейс TO-220-3
Q1: What is the purchase guide for G30N02T?
G30N02T of Goford Semiconductor is a N20V,RD(MAX)<[email protected],VTH0.5V~1.. ICHOME is a long-term spot supplier of G30N02T, supporting sample purchase and bulk order.
Q2: How to find the detailed information of G30N02T?
Download G30N02T Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingG30N02T from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide G30N02T alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you G30N02T replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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