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GT105N10T

GT105N10T

GT105N10T

Goford Semiconductor

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

GT105N10T Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

GT105N10T Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $1.42000 $1.42
500 $1.4058 $702.9
1000 $1.3916 $1391.6
1500 $1.3774 $2066.1
2000 $1.3632 $2726.4
2500 $1.349 $3372.5
25 items

GT105N10T Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

GT105N10T Goford Semiconductor

Имя Ценить
статус продукта Active
тип fet N-Channel
технология MOSFET (Metal Oxide)
Напряжение сток-исток (vdss) 100 V
ток - непрерывный сток (id) при 25°c 55A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 4.5V, 10V
rds на (макс) @ id, vgs 10.5mOhm @ 35A, 10V
vgs(th) (макс) @ id 2.5V @ 250µA
заряд затвора (qg) (макс.) @ vgs 54 nC @ 10 V
вгс (макс) ±20V
входная емкость (ciss) (макс.) @ vds -
особенность fet -
рассеиваемая мощность (макс.) 74W (Tc)
рабочая температура -55°C ~ 150°C (TJ)
тип крепления Through Hole
пакет устройства поставщика TO-220
упаковка / кейс TO-220-3
Q1: What is the purchase guide for GT105N10T?
GT105N10T of Goford Semiconductor is a N100V,RD(MAX)<10.5M@10V,RD(MAX)<. ICHOME is a long-term spot supplier of GT105N10T, supporting sample purchase and bulk order.
Q2: How to find the detailed information of GT105N10T?
Download GT105N10T Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingGT105N10T from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide GT105N10T alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you GT105N10T replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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