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IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1

MOSFET N-CH 100V 35A TO252-31

compliant

TO-252-3, DPak (2 Leads + Tab), SC-63

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

IPD35N10S3L26ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.47140 -
5,000 $0.44782 -
12,500 $0.43099 -
2501 items

IPD35N10S3L26ATMA1 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

IPD35N10S3L26ATMA1 Infineon Technologies

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Q1: What is the purchase guide for IPD35N10S3L26ATMA1?
IPD35N10S3L26ATMA1 of Infineon Technologies is a MOSFET N-CH 100V 35A TO252-31. ICHOME is a long-term spot supplier of IPD35N10S3L26ATMA1, supporting sample purchase and bulk order.
Q2: How to find the detailed information of IPD35N10S3L26ATMA1?
Download IPD35N10S3L26ATMA1 Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingIPD35N10S3L26ATMA1 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide IPD35N10S3L26ATMA1 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you IPD35N10S3L26ATMA1 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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