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SIGC109T120R3

SIGC109T120R3

SIGC109T120R3

Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

SIGC109T120R3 Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

SIGC109T120R3 Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $10.06000 $10.06
500 $9.9594 $4979.7
1000 $9.8588 $9858.8
1500 $9.7582 $14637.3
2000 $9.6576 $19315.2
2500 $9.557 $23892.5
471 items

SIGC109T120R3 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

SIGC109T120R3 Infineon Technologies

Имя Ценить
статус продукта Active
тип IGBT Trench Field Stop
напряжение - пробой коллектор-эмиттер (макс.) 1200 V
ток - коллектор (ic) (макс.) -
ток - коллектор импульсный (icm) 300 A
vce(on) (макс) @ vge, ic 2.1V @ 15V, 100A
мощность - макс. -
переключение энергии -
тип ввода Standard
заряд ворот -
td (вкл/выкл) при 25°c -
условие теста -
время обратного восстановления (trr) -
рабочая температура -55°C ~ 150°C (TJ)
тип крепления Surface Mount
упаковка / кейс Die
пакет устройства поставщика Die
Q1: What is the purchase guide for SIGC109T120R3?
SIGC109T120R3 of Infineon Technologies is a INSULATED GATE BIPOLAR TRANSISTO. ICHOME is a long-term spot supplier of SIGC109T120R3, supporting sample purchase and bulk order.
Q2: How to find the detailed information of SIGC109T120R3?
Download SIGC109T120R3 Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingSIGC109T120R3 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide SIGC109T120R3 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you SIGC109T120R3 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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