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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 337A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 180A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 9mA |
| Gate Charge (Qg) (Max) @ Vgs | 1224nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 1000V |
| Power - Max | 2140W |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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