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HGT1S10N120BNST

HGT1S10N120BNST

HGT1S10N120BNST

onsemi

IGBT 1200V 35A 298W TO263AB

HGT1S10N120BNST Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

HGT1S10N120BNST Цены и заказ

Количество Цена за единицу товара Цена внешн.
800 $1.89606 $1516.848
1,600 $1.61366 -
2,400 $1.54125 -
Inventory changes frequently.

HGT1S10N120BNST Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

HGT1S10N120BNST onsemi

Имя Ценить
статус продукта Active
тип IGBT NPT
напряжение - пробой коллектор-эмиттер (макс.) 1200 V
ток - коллектор (ic) (макс.) 35 A
ток - коллектор импульсный (icm) 80 A
vce(on) (макс) @ vge, ic 2.7V @ 15V, 10A
мощность - макс. 298 W
переключение энергии 320µJ (on), 800µJ (off)
тип ввода Standard
заряд ворот 100 nC
td (вкл/выкл) при 25°c 23ns/165ns
условие теста 960V, 10A, 10Ohm, 15V
время обратного восстановления (trr) -
рабочая температура -55°C ~ 150°C (TJ)
тип крепления Surface Mount
упаковка / кейс TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
пакет устройства поставщика D²PAK (TO-263)
Q1: What is the purchase guide for HGT1S10N120BNST?
HGT1S10N120BNST of onsemi is a IGBT 1200V 35A 298W TO263AB. ICHOME is a long-term spot supplier of HGT1S10N120BNST, supporting sample purchase and bulk order.
Q2: How to find the detailed information of HGT1S10N120BNST?
Download HGT1S10N120BNST Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingHGT1S10N120BNST from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide HGT1S10N120BNST alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you HGT1S10N120BNST replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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