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GT30J121(Q)

GT30J121(Q)

GT30J121(Q)

Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

GT30J121(Q) Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

GT30J121(Q) Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $2.90960 $2.9096
500 $2.880504 $1440.252
1000 $2.851408 $2851.408
1500 $2.822312 $4233.468
2000 $2.793216 $5586.432
2500 $2.76412 $6910.3
Inventory changes frequently.

GT30J121(Q) Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

GT30J121(Q) Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип IGBT -
напряжение - пробой коллектор-эмиттер (макс.) 600 V
ток - коллектор (ic) (макс.) 30 A
ток - коллектор импульсный (icm) 60 A
vce(on) (макс) @ vge, ic 2.45V @ 15V, 30A
мощность - макс. 170 W
переключение энергии 1mJ (on), 800µJ (off)
тип ввода Standard
заряд ворот -
td (вкл/выкл) при 25°c 90ns/300ns
условие теста 300V, 30A, 24Ohm, 15V
время обратного восстановления (trr) -
рабочая температура -
тип крепления Through Hole
упаковка / кейс TO-3P-3, SC-65-3
пакет устройства поставщика TO-3P(N)
Q1: What is the purchase guide for GT30J121(Q)?
GT30J121(Q) of Toshiba Semiconductor and Storage is a IGBT 600V 30A 170W TO3PN. ICHOME is a long-term spot supplier of GT30J121(Q), supporting sample purchase and bulk order.
Q2: How to find the detailed information of GT30J121(Q)?
Download GT30J121(Q) Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingGT30J121(Q) from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide GT30J121(Q) alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you GT30J121(Q) replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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