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RN1112MFV,L3F

RN1112MFV,L3F

RN1112MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

RN1112MFV,L3F Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

RN1112MFV,L3F Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $0.18000 $0.18
500 $0.1782 $89.1
1000 $0.1764 $176.4
1500 $0.1746 $261.9
2000 $0.1728 $345.6
2500 $0.171 $427.5
8000 items

RN1112MFV,L3F Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

RN1112MFV,L3F Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип транзистора NPN - Pre-Biased
ток - коллектор (ic) (макс.) 100 mA
напряжение - пробой коллектор-эмиттер (макс.) 50 V
резистор - база (r1) 22 kOhms
резистор - эмиттер-база (r2) -
коэффициент усиления постоянного тока (hfe) (мин) @ ic, vce 120 @ 1mA, 5V
насыщение vce (макс.) @ ib, ic 300mV @ 500µA, 5mA
ток - отсечка коллектора (макс.) 100nA (ICBO)
частота - переход -
мощность - макс. 150 mW
тип крепления Surface Mount
упаковка / кейс SOT-723
пакет устройства поставщика VESM
Q1: What is the purchase guide for RN1112MFV,L3F?
RN1112MFV,L3F of Toshiba Semiconductor and Storage is a TRANS PREBIAS NPN 50V 0.1A VESM. ICHOME is a long-term spot supplier of RN1112MFV,L3F, supporting sample purchase and bulk order.
Q2: How to find the detailed information of RN1112MFV,L3F?
Download RN1112MFV,L3F Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingRN1112MFV,L3F from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide RN1112MFV,L3F alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you RN1112MFV,L3F replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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