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RN2106MFV,L3F(CT

  • RN2106MFV,L3F(CT
  • RN2106MFV,L3F(CT

RN2106MFV,L3F(CT

RN2106MFV,L3F(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

RN2106MFV,L3F(CT Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

RN2106MFV,L3F(CT Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $0.18000 $0.18
500 $0.1782 $89.1
1000 $0.1764 $176.4
1500 $0.1746 $261.9
2000 $0.1728 $345.6
2500 $0.171 $427.5
3033 items
Upload BOM File

RN2106MFV,L3F(CT Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

RN2106MFV,L3F(CT Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип транзистора PNP - Pre-Biased
ток - коллектор (ic) (макс.) 100 mA
напряжение - пробой коллектор-эмиттер (макс.) 50 V
резистор - база (r1) 4.7 kOhms
резистор - эмиттер-база (r2) 47 kOhms
коэффициент усиления постоянного тока (hfe) (мин) @ ic, vce 80 @ 10mA, 5V
насыщение vce (макс.) @ ib, ic 300mV @ 500µA, 5mA
ток - отсечка коллектора (макс.) 500nA
частота - переход 250 MHz
мощность - макс. 150 mW
тип крепления Surface Mount
упаковка / кейс SOT-723
пакет устройства поставщика VESM
Q1: What is the purchase guide for RN2106MFV,L3F(CT?
RN2106MFV,L3F(CT of Toshiba Semiconductor and Storage is a TRANS PREBIAS PNP 50V 0.1A VESM. ICHOME is a long-term spot supplier of RN2106MFV,L3F(CT, supporting sample purchase and bulk order.
Q2: How to find the detailed information of RN2106MFV,L3F(CT?
Download RN2106MFV,L3F(CT Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingRN2106MFV,L3F(CT from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide RN2106MFV,L3F(CT alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you RN2106MFV,L3F(CT replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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