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TK20J60W,S1VE

TK20J60W,S1VE

TK20J60W,S1VE

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

TK20J60W,S1VE Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

TK20J60W,S1VE Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $5.10000 $5.1
500 $5.049 $2524.5
1000 $4.998 $4998
1500 $4.947 $7420.5
2000 $4.896 $9792
2500 $4.845 $12112.5
57 items

TK20J60W,S1VE Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

TK20J60W,S1VE Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип fet N-Channel
технология MOSFET (Metal Oxide)
Напряжение сток-исток (vdss) 600 V
ток - непрерывный сток (id) при 25°c 20A (Ta)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 10V
rds на (макс) @ id, vgs 155mOhm @ 10A, 10V
vgs(th) (макс) @ id 3.7V @ 1mA
заряд затвора (qg) (макс.) @ vgs 48 nC @ 10 V
вгс (макс) ±30V
входная емкость (ciss) (макс.) @ vds 1680 pF @ 300 V
особенность fet -
рассеиваемая мощность (макс.) 165W (Tc)
рабочая температура 150°C
тип крепления Through Hole
пакет устройства поставщика TO-3P(N)
упаковка / кейс TO-3P-3, SC-65-3
Q1: What is the purchase guide for TK20J60W,S1VE?
TK20J60W,S1VE of Toshiba Semiconductor and Storage is a X35 PB-F POWER MOSFET TRANSISTOR. ICHOME is a long-term spot supplier of TK20J60W,S1VE, supporting sample purchase and bulk order.
Q2: How to find the detailed information of TK20J60W,S1VE?
Download TK20J60W,S1VE Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingTK20J60W,S1VE from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide TK20J60W,S1VE alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TK20J60W,S1VE replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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