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TPH2R306NH,L1Q

TPH2R306NH,L1Q

TPH2R306NH,L1Q

MOSFET N-CH 60V 60A 8SOP

compliant

8-PowerVDFN

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

TPH2R306NH,L1Q Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $1.27400 -
3724 items

TPH2R306NH,L1Q Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

TPH2R306NH,L1Q Toshiba Semiconductor and Storage

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Q1: What is the purchase guide for TPH2R306NH,L1Q?
TPH2R306NH,L1Q of Toshiba Semiconductor and Storage is a MOSFET N-CH 60V 60A 8SOP. ICHOME is a long-term spot supplier of TPH2R306NH,L1Q, supporting sample purchase and bulk order.
Q2: How to find the detailed information of TPH2R306NH,L1Q?
Download TPH2R306NH,L1Q Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingTPH2R306NH,L1Q from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide TPH2R306NH,L1Q alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TPH2R306NH,L1Q replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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