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TPN1R603PL,L1Q

TPN1R603PL,L1Q

TPN1R603PL,L1Q

MOSFET N-CH 30V 80A 8TSON

compliant

8-PowerVDFN

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

TPN1R603PL,L1Q Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.52640 -
Inventory changes frequently.

TPN1R603PL,L1Q Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

TPN1R603PL,L1Q Toshiba Semiconductor and Storage

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 15 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Q1: What is the purchase guide for TPN1R603PL,L1Q?
TPN1R603PL,L1Q of Toshiba Semiconductor and Storage is a MOSFET N-CH 30V 80A 8TSON. ICHOME is a long-term spot supplier of TPN1R603PL,L1Q, supporting sample purchase and bulk order.
Q2: How to find the detailed information of TPN1R603PL,L1Q?
Download TPN1R603PL,L1Q Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingTPN1R603PL,L1Q from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide TPN1R603PL,L1Q alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TPN1R603PL,L1Q replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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