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TW045N120C,S1F

TW045N120C,S1F

TW045N120C,S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 45MO

TW045N120C,S1F Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

TW045N120C,S1F Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $24.84000 $24.84
500 $24.5916 $12295.8
1000 $24.3432 $24343.2
1500 $24.0948 $36142.2
2000 $23.8464 $47692.8
2500 $23.598 $58995
180 items

TW045N120C,S1F Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

TW045N120C,S1F Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип fet N-Channel
технология SiC (Silicon Carbide Junction Transistor)
Напряжение сток-исток (vdss) 1200 V
ток - непрерывный сток (id) при 25°c 40A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 18V
rds на (макс) @ id, vgs 59mOhm @ 20A, 18V
vgs(th) (макс) @ id 5V @ 6.7mA
заряд затвора (qg) (макс.) @ vgs 57 nC @ 18 V
вгс (макс) +25V, -10V
входная емкость (ciss) (макс.) @ vds 1969 pF @ 800 V
особенность fet -
рассеиваемая мощность (макс.) 182W (Tc)
рабочая температура 175°C
тип крепления Through Hole
пакет устройства поставщика TO-247
упаковка / кейс TO-247-3
Q1: What is the purchase guide for TW045N120C,S1F?
TW045N120C,S1F of Toshiba Semiconductor and Storage is a G3 1200V SIC-MOSFET TO-247 45MO. ICHOME is a long-term spot supplier of TW045N120C,S1F, supporting sample purchase and bulk order.
Q2: How to find the detailed information of TW045N120C,S1F?
Download TW045N120C,S1F Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingTW045N120C,S1F from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide TW045N120C,S1F alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TW045N120C,S1F replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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