Welcome to ichome.com!

logo
Дом

TW083N65C,S1F

TW083N65C,S1F

TW083N65C,S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 83MOH

TW083N65C,S1F Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

TW083N65C,S1F Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $13.40000 $13.4
500 $13.266 $6633
1000 $13.132 $13132
1500 $12.998 $19497
2000 $12.864 $25728
2500 $12.73 $31825
180 items

TW083N65C,S1F Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

TW083N65C,S1F Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип fet N-Channel
технология SiC (Silicon Carbide Junction Transistor)
Напряжение сток-исток (vdss) 650 V
ток - непрерывный сток (id) при 25°c 30A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 18V
rds на (макс) @ id, vgs 113mOhm @ 15A, 18V
vgs(th) (макс) @ id 5V @ 600µA
заряд затвора (qg) (макс.) @ vgs 28 nC @ 18 V
вгс (макс) +25V, -10V
входная емкость (ciss) (макс.) @ vds 873 pF @ 400 V
особенность fet -
рассеиваемая мощность (макс.) 111W (Tc)
рабочая температура 175°C
тип крепления Through Hole
пакет устройства поставщика TO-247
упаковка / кейс TO-247-3
Q1: What is the purchase guide for TW083N65C,S1F?
TW083N65C,S1F of Toshiba Semiconductor and Storage is a G3 650V SIC-MOSFET TO-247 83MOH. ICHOME is a long-term spot supplier of TW083N65C,S1F, supporting sample purchase and bulk order.
Q2: How to find the detailed information of TW083N65C,S1F?
Download TW083N65C,S1F Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingTW083N65C,S1F from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide TW083N65C,S1F alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TW083N65C,S1F replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
Загрузка PDF не удалась, попробуйте открыть в новом окне для доступа [Открыть], или нажмите, чтобы вернуться

Номер соответствующей детали

FCPF9N60NT
FCPF9N60NT
$0 $/кусок
AO6424
ZXMP4A16KTC
ZXMP4A16KTC
$0 $/кусок
FDMC2610
FDMC2610
$0 $/кусок
STP20NM50
STP20NM50
$0 $/кусок
RJK60S5DPP-E0#T2
NP32N055SHE-E1-AY
DMN2055U-13
DMN2055U-13
$0 $/кусок
SPD50N03S2-07G
ZXMP10A17GTA
ZXMP10A17GTA
$0 $/кусок

Ваш надежный партнер в области электроники

Мы стремимся превзойти ваши ожидания. IChome: новый взгляд на обслуживание клиентов в электронной промышленности.