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SIHB12N65E-GE3

SIHB12N65E-GE3

SIHB12N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 12A D2PAK

compliant

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

SIHB12N65E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.32000 $3.32
10 $3.01100 $30.11
100 $2.43830 $243.83
500 $1.91748 $958.74
1,000 $1.60500 -
3,000 $1.50084 -
5,000 $1.44876 -
Inventory changes frequently.

SIHB12N65E-GE3 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

SIHB12N65E-GE3 Vishay Siliconix

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1224 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Q1: What is the purchase guide for SIHB12N65E-GE3?
SIHB12N65E-GE3 of Vishay Siliconix is a MOSFET N-CH 650V 12A D2PAK. ICHOME is a long-term spot supplier of SIHB12N65E-GE3, supporting sample purchase and bulk order.
Q2: How to find the detailed information of SIHB12N65E-GE3?
Download SIHB12N65E-GE3 Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingSIHB12N65E-GE3 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide SIHB12N65E-GE3 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you SIHB12N65E-GE3 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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