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SIHD11N80AE-GE3

SIHD11N80AE-GE3

SIHD11N80AE-GE3

Vishay Siliconix

MOSFET N-CH 800V 8A TO252AA

compliant

TO-252-3, DPak (2 Leads + Tab), SC-63

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

SIHD11N80AE-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.88000 $1.88
500 $1.8612 $930.6
1000 $1.8424 $1842.4
1500 $1.8236 $2735.4
2000 $1.8048 $3609.6
2500 $1.786 $4465
Inventory changes frequently.

SIHD11N80AE-GE3 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

SIHD11N80AE-GE3 Vishay Siliconix

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 804 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Q1: What is the purchase guide for SIHD11N80AE-GE3?
SIHD11N80AE-GE3 of Vishay Siliconix is a MOSFET N-CH 800V 8A TO252AA. ICHOME is a long-term spot supplier of SIHD11N80AE-GE3, supporting sample purchase and bulk order.
Q2: How to find the detailed information of SIHD11N80AE-GE3?
Download SIHD11N80AE-GE3 Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingSIHD11N80AE-GE3 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide SIHD11N80AE-GE3 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you SIHD11N80AE-GE3 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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