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SIJH112E-T1-GE3

SIJH112E-T1-GE3

SIJH112E-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 23A/225A PPAK

compliant

8-PowerTDFN

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

SIJH112E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.82000 $4.82
500 $4.7718 $2385.9
1000 $4.7236 $4723.6
1500 $4.6754 $7013.1
2000 $4.6272 $9254.4
2500 $4.579 $11447.5
Inventory changes frequently.

SIJH112E-T1-GE3 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

SIJH112E-T1-GE3 Vishay Siliconix

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Q1: What is the purchase guide for SIJH112E-T1-GE3?
SIJH112E-T1-GE3 of Vishay Siliconix is a MOSFET N-CH 100V 23A/225A PPAK. ICHOME is a long-term spot supplier of SIJH112E-T1-GE3, supporting sample purchase and bulk order.
Q2: How to find the detailed information of SIJH112E-T1-GE3?
Download SIJH112E-T1-GE3 Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingSIJH112E-T1-GE3 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide SIJH112E-T1-GE3 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you SIJH112E-T1-GE3 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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