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SISH536DN-T1-GE3

SISH536DN-T1-GE3

SISH536DN-T1-GE3

Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

SISH536DN-T1-GE3 Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

SISH536DN-T1-GE3 Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $0.66000 $0.66
500 $0.6534 $326.7
1000 $0.6468 $646.8
1500 $0.6402 $960.3
2000 $0.6336 $1267.2
2500 $0.627 $1567.5
Inventory changes frequently.

SISH536DN-T1-GE3 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

SISH536DN-T1-GE3 Vishay Siliconix

Имя Ценить
статус продукта Active
тип fet N-Channel
технология MOSFET (Metal Oxide)
Напряжение сток-исток (vdss) 30 V
ток - непрерывный сток (id) при 25°c 24.7A (Ta), 67.4A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 4.5V, 10V
rds на (макс) @ id, vgs 3.25mOhm @ 10A, 10V
vgs(th) (макс) @ id 2.2V @ 250µA
заряд затвора (qg) (макс.) @ vgs 25 nC @ 10 V
вгс (макс) +16V, -12V
входная емкость (ciss) (макс.) @ vds 1150 pF @ 15 V
особенность fet -
рассеиваемая мощность (макс.) 3.57W (Ta), 26.5W (Tc)
рабочая температура -55°C ~ 150°C (TJ)
тип крепления Surface Mount
пакет устройства поставщика PowerPAK® 1212-8SH
упаковка / кейс PowerPAK® 1212-8SH
Q1: What is the purchase guide for SISH536DN-T1-GE3?
SISH536DN-T1-GE3 of Vishay Siliconix is a N-CHANNEL 30 V (D-S) MOSFET POWE. ICHOME is a long-term spot supplier of SISH536DN-T1-GE3, supporting sample purchase and bulk order.
Q2: How to find the detailed information of SISH536DN-T1-GE3?
Download SISH536DN-T1-GE3 Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingSISH536DN-T1-GE3 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide SISH536DN-T1-GE3 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you SISH536DN-T1-GE3 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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