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SISS66DN-T1-GE3

SISS66DN-T1-GE3

SISS66DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 49.1/178.3A PPAK

compliant

PowerPAK® 1212-8S

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

SISS66DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.71775 $0.71775
500 $0.7105725 $355.28625
1000 $0.703395 $703.395
1500 $0.6962175 $1044.32625
2000 $0.68904 $1378.08
2500 $0.6818625 $1704.65625
Inventory changes frequently.

SISS66DN-T1-GE3 Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small

SISS66DN-T1-GE3 Vishay Siliconix

Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 49.1A (Ta), 178.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85.5 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3327 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Q1: What is the purchase guide for SISS66DN-T1-GE3?
SISS66DN-T1-GE3 of Vishay Siliconix is a MOSFET N-CH 30V 49.1/178.3A PPAK. ICHOME is a long-term spot supplier of SISS66DN-T1-GE3, supporting sample purchase and bulk order.
Q2: How to find the detailed information of SISS66DN-T1-GE3?
Download SISS66DN-T1-GE3 Datasheet
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingSISS66DN-T1-GE3 from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide SISS66DN-T1-GE3 alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you SISS66DN-T1-GE3 replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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