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WNSC08650T6J

WNSC08650T6J

WNSC08650T6J

WeEn Semiconductors

SILICON CARBIDE POWER DIODE

WNSC08650T6J Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

WNSC08650T6J Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $3.24000 $3.24
500 $3.2076 $1603.8
1000 $3.1752 $3175.2
1500 $3.1428 $4714.2
2000 $3.1104 $6220.8
2500 $3.078 $7695
2876 items

WNSC08650T6J Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

WNSC08650T6J WeEn Semiconductors

Имя Ценить
статус продукта Active
тип диода Silicon Carbide Schottky
напряжение - постоянное обратное (vr) (макс.) 650 V
ток - средний выпрямленный (io) 8A
напряжение - прямое (vf) (макс.) @ if 1.7 V @ 8 A
скорость No Recovery Time > 500mA (Io)
время обратного восстановления (trr) 0 ns
ток - обратная утечка @ vr 50 µA @ 650 V
емкость @ vr, f 267pF @ 1V, 1MHz
тип крепления Surface Mount
упаковка / кейс 4-VSFN Exposed Pad
пакет устройства поставщика 5-DFN (8x8)
рабочая температура - переход 175°C (Max)
Q1: What is the purchase guide for WNSC08650T6J?
WNSC08650T6J of WeEn Semiconductors is a SILICON CARBIDE POWER DIODE. ICHOME is a long-term spot supplier of WNSC08650T6J, supporting sample purchase and bulk order.
Q2: How to find the detailed information of WNSC08650T6J?
Download WNSC08650T6J Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingWNSC08650T6J from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide WNSC08650T6J alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you WNSC08650T6J replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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